SEMIM92-Specificationfor4H-SICHomoepitaxialWafer-SEMIM92-0423-Current(1)

semiSEM川M92-0423SPECIFICATION FOR 4H-SIC HOMOEPITAXIAL WAFERThis Standard was technically approved by the Compound Semiconductor Materials Global TechnicalCommittee.This edition was approved for publication by the global Audits and Reviews Subcommittee onOctober 12,2022.Available at www.semiviews.org and www.semi.org in April 2023.NOTICE:The section symbol ()is used to reference a numbered section,paragraph,or header and all subordinateparagraphs,headers,and embedded material (i.e.,EXCEPTIONs,lists)therein.The paragraph symbol (is used toreference a particular numbered paragraph and embedded material therein.When duplicated (i.e.,$and thesymbols are used to reference more than one section or paragraph,respectively.NOTICE:Paragraphs entitled 'NOTE:are not an official part of this Standard or Safety Guideline and are notintended to modify or supersede the official Standard or Safety Guideline.These have been supplied by the globaltechnical committee to enhance the usage of the Standard or Safety Guideline.1 Purpose1.I This Specification covers requirements for 4H-SiC homoepitaxial wafers used in power device manufacturing.1.2 This Specification provides a uniform standard of 4H-SiC homoepitaxial wafers for the suppliers and thecustomers in the industrial chain.2 Scope2.1 This Specification specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grownon an n-type substrate,up to and including 30 um total thickness.2.2 Dimensional requirements are provided for the following categories of epitaxial wafers:.100.0 mm 4H-SiC epitaxial wafers.150.0 mm 4H-SiC epitaxial wafersNOTICE:SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use.It is the responsibility of the users of the Documents to establish appropriate safety and health practices,and determinethe applicability of regulatory or other limitations prior to use.3 Referenced Standards and Documents3.1 SEMI Standards and Safety GuidelinesSEMI M1-Specification for Polished Single Crystal Silicon WafersSEMI M40-Guide for Measurement of Roughness of Planar Surfaces on Polished WafersSEMI M55-Specification for Polished Monocrystalline Silicon Carbide WafersSEMI M59-Terminology for Silicon TechnologySEMI M81-Guide to Defects Found on Monocrystalline Silicon Carbide SubstratesSEMI M83-Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V CompoundSemiconductorsSEMI MF26-Test Method for Determining the Orientation of a Semiconductive Single CrystalSEMI MF95-Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped SiliconSubstrates Using an Infrared Dispersive SpectrophotometerSEMI MF523-Practice for Unaided Visual Inspection of Polished Silicon Wafer SurfacesSEMI MF533-Test Method for Thickness and Thickness Variation of Silicon WafersSEMI MF671-Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsSEMI M92-0423@SEMI 2023